PCIM Europe 2016:
Gewinner des Best Paper und der Young Engineer Awards ...

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PCIM Europe 2016:
Gewinner des Best Paper und der Young Engineer Awards sind bekannt gegeben

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Die Gewinner präsentierten ihren Vortrag erstmals auf der PCIM Europe 2016 Konferenz und sind im Tagungsband veröffentlicht. Die drei Young Engineer Award Gewinner erhalten ein Preisgeld, der Best Paper Award Gewinner ein Preisgeld und eine Einladung zur PCIM Asia 2017 Konferenz in Shanghai.

Der Gewinner des PCIM Europe Best Paper Award ist:

Nicolas Quentin, Sagem - Ampere Labs, Frankreich

A Large Input Voltage Range 1 MHz Full Converter with 95% Peak Efficiency for Aircraft Applications

Zu den Gewinnern der drei PCIM Europe Young Engineer Awards zählen:

Christian Felgemacher, University of Kassel, Deutschland

Benefits of Increased Cosmic Radiation Robustness of SiC Semiconductors in large Power-Converters

Stefan Hain, University of Bayreuth, Deutschland

New Ultra Fast Short Circuit Detection Method Without Using the Desaturation Process of the Power Semiconductor

Christoph Marxgut, Helbling Technik, Deutschland

A Generic Topology for Electrical Energy Storage Systems

 

Kurzfassung des PCIM Europe 2016 Best Papers (Konferenzsprache Englisch):

A Large Input Voltage Range 1 MHz Full Converter with 95% Peak Efficiency for Aircraft Applications

Nicolas Quentin, SAGEM, F; Remi Perrin, INSA de Lyon, F; Christian Martin, Charles Joubert, Ampere Laboratory, F; Louis Grimaud, Safran Group, F; Rolando Burgos, Dushan Boroyevich, CPES/Virginia Tech, USA

This digest presents a design methodology of a 50 W isolated DC/DC converter serving as a power supply for aircraft equipment like a FADEC (Full Authority Digital Electronics Control). The particularity of this work is the design of a full converter regarding two antagonistic requirements, which are wide input voltage and high efficiency.

 

Kurzfassungen der PCIM Europe 2016 Young Engineer Award

Papers (Konferenzsprache Englisch):

Benefits of Increased Cosmic Radiation Robustness of SiC Semiconductors in large Power-Converters

Christian Felgemacher, Samuel Araujo Vasconcelos, Christian Nöding, Peter Zacharias, University of Kassel, Deutschland


Cosmic radiation induced single-event-burnout is a known failure mode for power semiconductors. To achieve high reliability derating of the maximum voltage applied to the semiconductors is common. Measurements of the voltage dependent failure rate of SiC MOSFETs have shown that SiC devices can be operated with less voltage derating. The possible advantage this brings for applications such as photovoltaic inverters is investigated in this paper.

 

New Ultra Fast Short Circuit Detection Method Without Using the Desaturation Process of the Power Semiconductor

Stefan Hain, Mark-M. Bakran, University of Bayreuth, Deutschland

This paper presents a new short circuit detection method for power semiconductor devices by monitoring the di/dt and gate voltage behaviour. It can be shown that this method is able to detect a low inductive hard switching fault within 20ns, after the fault can be distinguished from a normal turn-on process. Furthermore, the ability to detect fault under load conditions reliably with low and high short circuit inductances is demonstrated.

 

A Generic Topology for Electrical Energy Storage Systems

Christoph Marxgut, Helbling Technik, Deutschland

 

This paper presents an electrical storage system which is aimed for the recuperation of energy in electrical drives. The topology is based on a combination of a multi-level and a bidirectional boost converter which enable the application of low-voltage energy storage components. Due to its generic structure, the topology can be adapted to different voltage, power, and energy levels which makes it interesting for various applications.




Quelle: mesago.de

 
 
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